TekBox TBMDA5

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Modulated wideband HF power amplifier 2.5 W with a frequency range of 150 kHz to 1 GHz for driving antennas, near field probes and TEM cells from a spectrum-analyzer TG-output.

2 years warranty

Nr: TBMDA5

with FREE shipping within the EU!
Shipping costs outside EU

in 11-30 days after order in stock.

€ 1,089.- net (VAT Details)

€ 1,295.91 incl. 19% VAT

Description

The TBMDA5 modulated amplifier provides the necessary power, bandwidth and modulation for conducted immunity testing using CDNs in the frequency range from 150 kHz to 400 MHz. It is designed to be driven by the tracking generator output of spectrum analysers.

With a 1 dB compression point of up to 2.5W in the frequency range 150 kHz to 400 MHz it can generate test levels class 1 and class 2 according to ISO / EN 61000-4-6. A built in AM- modulator enables use of tracking generators as signal source.

The TBMDA5 has sufficient gain to achieve maximum output power with 0 dBm provided by a spectrum analyzer tracking generator.

Besides 1 kHz, 80 % AM, the TBMDA5 provides built in modulation capability to generate 1 kHz, 50 % duty cycle PM signals. In PM mode, the TBMDA5 can also generate a 217 Hz Signal with 12.5 % duty cycle to simulate mobile phone TDMA noise.

Features

• CW amplifier (modulation off) • 1 kHz, 80 % AM modulation • 1 kHz, 50 % duty cycle pulse modulation 217 Hz • 12.5 % duty cycle pulse modulation

Specifications

• Input / Output: 50 Ohm, N female • Supply Voltage range: 110 V…240 V • Supply power consumption: 19 W @ 220V • Operating temperature range: -20 °C to 50 °C • Frequency range: 150 kHz – 400 MHz, usable from 100 kHz to 1.2 GHz Small signal gain: 38 dB typ. • Gain flatness 150 kHz – 400 MHz / Pin = -5 dBm: 3.5 dB typ. • Saturated output power @ 150 kHz / Pin = 0 dBm: 32.6 dBm (1.8 W) typ. • Saturated output power @ 500 kHz / Pin = 0 dBm: 36 dBm (4 W) typ. • Saturated output power @ 1 MHz / Pin = 0 dBm: 36.1 dBm (4.1 W) typ. • Saturated output power @ 10 MHz / Pin = 0 dBm: 37.8 dBm (6 W) typ. • Saturated output power @ 100 MHz / Pin = 0 dBm: 36.4 dBm (4.4 W) typ. • Saturated output power @ 250 MHz / Pin = 0 dBm: 36 dBm (4 W) typ. • Saturated output power @ 400 MHz / Pin = 0 dBm: 33.7 dBm (2.3 W) typ. • Saturated output power @ 750 MHz / Pin = 0 dBm: 33.2 dBm (2.1 W) typ. • Saturated output power @ 1 GHz / Pin = 0 dBm: 34.8 dBm (3 W) typ. • Saturated output power @ 1.1 GHz / Pin = 0 dBm: 31.1 dBm (1.3 W) typ. • Saturated output power @ 1.2 GHz / Pin = 0 dBm: 27.3 dBm (0.5 W) typ. • 1dB output compression point @ 150 kHz: +29.6 dBm typ. (Pin: -9 dBm) • 1dB output compression point @ 500 kHz: +32.9 dBm typ. (Pin: -6 dBm) • 1dB output compression point @ 1 MHz: +33.1 dBm typ. (Pin: -5 dBm)

Application:

• General-purpose wideband RF power amplifier • Wideband RF power amplifier for conducted immunity testing driving CDNs or BCI-probes • Wideband RF power amplifier for radiated immunity testing, driving near field probes • Wideband RF power amplifier for radiated immunity testing, driving TEM Cells