The SMM3000X series is a precise Source/Measure Unit (SMU) instrument that can simultaneously output and measure voltage and current. It integrates the functions of a current source, voltage source, voltmeter, and ammeter within the instrument, allowing for easy switching between these functions.
The graphical user interface (GUI) it employs, along with advanced capacitive touchscreen technology, allows for intuitive operation.
The SMM3000X is the SMU for everyone: a versatile instrument, particularly well-suited for characterizing modern scaled semiconductors, nano-scale devices and materials, organic semiconductors, printed electronics, and other small-geometry and low-power devices.
It is widely used in fields such as research and educational applications, industrial development, testing, and manufacturing.
| Model | SMM3311X | SMM3312X |
|---|---|---|
| source(DC) voltage | ±210 V | ±210 V |
| ±3.03 A | ±3.03 A |
| Pulsed | ±10.5 A | ±10.5 A |
| Maximum resolution source | 2,100,000 | 2,100,000 |
| Maximum resolution measurement | 2,100,000 | 2,100,000 |
| Current resolution source | 10 fA | 10 fA |
| Current resolution measurement | 10 fA | 10 fA |
| Current range (DC) | 10 nA - 3 A | 10 nA - 3 A |
| Voltage resolution source | 100 nV | 100 nV |
| Voltage resolution measurement | 100 nV | 100 nV |
| Voltage range | 200 mV - 200 V | 200 mV - 200 V |
| Minimum trigger interval | 10 μs | 10 μs |
| Channels | 1 | 2 |
In pulse mode, the SMM3000X series supports pulsed current output up to ±10.5 A, with a minimum pulse width of 50 μs. This allows precise emulation of transient operating conditions of power devices, such as switching loss testing for GaN and SiC devices, providing strong support for R&D and validation of wide- bandgap power
The SMM3000X supports linear, log and pulsed sweep modes. Users can define start and stop values with fixed step sizes to source voltage or current point-by-point, while automatically measuring and logging each data point. This enables fast characterization of devices such as diodes and transistors, allowing engineers to extract I-V curves and analyze conduction behavior under different operating conditions.
Language: English
Version: EN 2.0A
File Size: 1.58 MiB
Release Date: 22.01.2026
Language: English
Version: EN01A
File Size: 2.98 MiB
Release Date: 07.03.2025
Language: English
Version: EN01A
File Size: 5.14 MiB
Release Date: 18.04.2025